Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

RS-artikelnummer:: 220-7404
Tillv. art.nr:: IPD30N06S4L23ATMA2
Tillverkare / varumärke:: Infineon

Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

Mängdrabatt möjlig

Antal (1 förpackning med 20 enheter)*

132,44 kr

(exkl. moms)

165,56 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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500 enhet(er) är redo att levereras

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Enheter	Per enhet	Per förpackning*
20 - 80	6,622 kr	132,44 kr
100 - 180	5,175 kr	103,50 kr
200 - 480	4,839 kr	96,78 kr
500 - 980	4,503 kr	90,06 kr
1000 +	4,178 kr	83,56 kr

*vägledande pris

RS-artikelnummer:: 220-7404
Tillv. art.nr:: IPD30N06S4L23ATMA2
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	23mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	16 V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	16.1nC
	Maximum Power Dissipation Pd	36W
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22 mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 23mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 16 V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 16.1nC
	Maximum Power Dissipation Pd 36W
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Width 6.22 mm
	Automotive Standard AEC-Q101

Datasheet - IPD30N06S4L23ATMA2

The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩThe new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK.

N-channel - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

world's lowest RDS at 60V (on)

highest current capability

lowest switching and conduction power losses for highest thermal efficiency

robust packages with superior quality and reliability

Optimized total gate charge enables smaller driver output stages

Infineon OptiMOS Type N-Channel MOSFET & Diode, 30 A, 60 V Enhancement, 3-Pin TO-252 IPD30N06S4L23ATMA2

GRATIS leverans för online beställningar över 500,00 kr

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