Infineon HEXFET Type N-Channel MOSFET, 62 A, 55 V, 3-Pin TO-252
- RS-artikelnummer:
- 218-3112
- Tillv. art.nr:
- IRFR48ZTRLPBF
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 3000 enheter)*
20 265,00 kr
(exkl. moms)
25 332,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 15 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 6,755 kr | 20 265,00 kr |
*vägledande pris
- RS-artikelnummer:
- 218-3112
- Tillv. art.nr:
- IRFR48ZTRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 91W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39 mm | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 91W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Operating Temperature 175°C | ||
Width 2.39 mm | ||
Length 6.73mm | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-Channel power MOSFET. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Lead free
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