Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET IRF6775MTRPBF
- RS-artikelnummer:
- 218-3102
- Tillv. art.nr:
- IRF6775MTRPBF
- Tillverkare / varumärke:
- Infineon
Antal (1 förpackning med 10 enheter)*
107,07 kr
(exkl. moms)
133,84 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 + | 10,707 kr | 107,07 kr |
*vägledande pris
- RS-artikelnummer:
- 218-3102
- Tillv. art.nr:
- IRF6775MTRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1.3V | |
| Width | 3.95 mm | |
| Length | 4.85mm | |
| Height | 0.68mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1.3V | ||
Width 3.95 mm | ||
Length 4.85mm | ||
Height 0.68mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.
Latest MOSFET Silicon technology
Dual sided cooling compatible
Compatible with existing surface mount technologies
Lead-Free
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