Infineon IPN Type N-Channel MOSFET, 4.5 A, 800 V Enhancement, 3-Pin SOT-223

RS-artikelnummer:: 217-2552
Tillv. art.nr:: IPN80R1K2P7ATMA1
Tillverkare / varumärke:: Infineon

Infineon IPN Type N-Channel MOSFET, 4.5 A, 800 V Enhancement, 3-Pin SOT-223

Antal (1 rulle med 3000 enheter)*

12 543,00 kr

(exkl. moms)

15 678,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 11 januari 2027

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Enheter	Per enhet	Per rulle*
3000 +	4,181 kr	12 543,00 kr

*vägledande pris

RS-artikelnummer:: 217-2552
Tillv. art.nr:: IPN80R1K2P7ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	800V
	Series	IPN
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	6.8W
	Typical Gate Charge Qg @ Vgs	11nC
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.7mm
	Width	3.7 mm
	Height	1.8mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 800V
	Series IPN
	Package Type SOT-223
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 6.8W
	Typical Gate Charge Qg @ Vgs 11nC
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.7mm
	Width 3.7 mm
	Height 1.8mm
	Automotive Standard No

Datasheet - IPN80R1K2P7ATMA1

The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ

Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

Infineon IPN Type N-Channel MOSFET, 4.5 A, 800 V Enhancement, 3-Pin SOT-223

GRATIS leverans för online beställningar över 500,00 kr

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