Infineon OptiMOS Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN

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24 650,00 kr

(exkl. moms)

30 800,00 kr

(inkl. moms)

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5000 +4,93 kr24 650,00 kr

*vägledande pris

RS-artikelnummer:
215-2472
Tillv. art.nr:
BSZ146N10LS5ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Package Type

PQFN

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

52W

Typical Gate Charge Qg @ Vgs

8nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(the)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Low R DS(on) in small package

Low gate charge

Lower output charge

Logic level compatibility

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