Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-252 IPD65R1K0CEAUMA1
- RS-artikelnummer:
- 214-9045
- Tillv. art.nr:
- IPD65R1K0CEAUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
185,50 kr
(exkl. moms)
232,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 400 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 7,42 kr | 185,50 kr |
| 125 - 225 | 7,056 kr | 176,40 kr |
| 250 - 600 | 6,895 kr | 172,38 kr |
| 625 - 1225 | 6,447 kr | 161,18 kr |
| 1250 + | 6,003 kr | 150,08 kr |
*vägledande pris
- RS-artikelnummer:
- 214-9045
- Tillv. art.nr:
- IPD65R1K0CEAUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | CoolMOS CE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series CoolMOS CE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications
relaterade länkar
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-251 IPS65R1K0CEAKMA2
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252