Infineon CoolMOS CE Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1

RS-artikelnummer:: 130-0898
Tillv. art.nr:: IPD60R1K0CEAUMA1
Tillverkare / varumärke:: Infineon

Infineon CoolMOS CE Type N-Channel MOSFET, 6.8 A, 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1

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129,375 kr

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161,725 kr

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RS-artikelnummer:: 130-0898
Tillv. art.nr:: IPD60R1K0CEAUMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	6.8A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS CE
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	61W
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Operating Temperature	150°C
	Height	2.41mm
	Standards/Approvals	No
	Width	6.22 mm
	Length	6.73mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 6.8A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS CE
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 61W
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Operating Temperature 150°C
	Height 2.41mm
	Standards/Approvals No
	Width 6.22 mm
	Length 6.73mm
	Automotive Standard No

Infineon CoolMOS™ CE Series MOSFET, 6.8A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IPD60R1K0CEAUMA1

This high-voltage MOSFET is designed to improve performance in various power applications. It is suitable for systems requiring robust switching capabilities and serves sectors such as automation and electronics. The CoolMOS technology employs superjunction principles, ensuring efficiency and reliability under diverse operating conditions.

Features & Benefits

• Reduction in switching and conduction losses enhances efficiency

• Robust body diode withstands hard commutation for increased reliability

• Low gate charge characteristics simplify driver requirements during operation

• Enhanced ESD robustness promotes durability in challenging environments

• Suitable for both hard and soft switching applications optimises performance

Applications

• Utilised in power factor correction stages for effective energy management

• Employed in hard switching PWM stages for efficient power conversion and control

• Integrates seamlessly within resonant switching stages across various device

• Suitable for multiple sectors including lighting, servers, and telecom equipment

How does the switching behaviour impact energy efficiency during operation?

Switching behaviour is important as lower switching losses contribute to higher overall efficiency, leading to cooler operation and reduced heat generation, which supports system longevity.

What protective measures are recommended during installation?

Using ferrite beads on Gates or separate totem poles is advisable to reduce ringing and ensure stable operation during switching.

Can it operate effectively under extreme temperature conditions?

The MOSFET is rated for operation between -40°C and +150°C, enabling reliable functionality in various environmental conditions.

What considerations should be taken when paralleling multiple devices?

For effective paralleling, proper gate drive techniques should be employed to achieve balanced current distribution among the devices and optimise performance.

What implications do the maximum ratings have for system design?

Understanding maximum ratings such as continuous drain current and voltage limits is Crucial in system design to avoid exceeding those thresholds, ensuring performance and reliability in applications.