Infineon Typ N Kanal, MOSFET, 6.8 A 650 V Förbättring, 3 Ben, TO-252, CoolMOS CE

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RS-artikelnummer:
130-0898
Tillv. art.nr:
IPD60R1K0CEAUMA1
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Produkttyp

MOSFET

Kanaltyp

Typ N

Maximal kontinuerlig dräneringsström Id

6.8A

Maximal källspänning för dränering Vds

650V

Kapseltyp

TO-252

Serie

CoolMOS CE

Fästetyp

Yta

Antal ben

3

Maximal drain-källresistans Rds

1Ω

Kanalläge

Förbättring

Minsta arbetsstemperatur

-40°C

Typisk grindladdning Qg @ Vgs

13nC

Framåtriktad spänning Vf

0.9V

Maximal effektförlust Pd

61W

Maximal spänning för grindkälla Vgs

30 V

Maximal arbetstemperatur

150°C

Bredd

6.22 mm

Höjd

2.41mm

Längd

6.73mm

Standarder/godkännanden

No

Fordonsstandard

Nej

Infineon CoolMOS™ CE Series MOSFET, 6.8A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IPD60R1K0CEAUMA1


This high-voltage MOSFET is designed to improve performance in various power applications. It is suitable for systems requiring robust switching capabilities and serves sectors such as automation and electronics. The CoolMOS technology employs superjunction principles, ensuring efficiency and reliability under diverse operating conditions.

Features & Benefits


• Reduction in switching and conduction losses enhances efficiency

• Robust body diode withstands hard commutation for increased reliability

• Low gate charge characteristics simplify driver requirements during operation

• Enhanced ESD robustness promotes durability in challenging environments

• Suitable for both hard and soft switching applications optimises performance

Applications


• Utilised in power factor correction stages for effective energy management

• Employed in hard switching PWM stages for efficient power conversion and control

• Integrates seamlessly within resonant switching stages across various device

• Suitable for multiple sectors including lighting, servers, and telecom equipment

How does the switching behaviour impact energy efficiency during operation?


Switching behaviour is important as lower switching losses contribute to higher overall efficiency, leading to cooler operation and reduced heat generation, which supports system longevity.

What protective measures are recommended during installation?


Using ferrite beads on gates or separate totem poles is advisable to reduce ringing and ensure stable operation during switching.

Can it operate effectively under extreme temperature conditions?


The MOSFET is rated for operation between -40°C and +150°C, enabling reliable functionality in various environmental conditions.

What considerations should be taken when paralleling multiple devices?


For effective paralleling, proper gate drive techniques should be employed to achieve balanced current distribution among the devices and optimise performance.

What implications do the maximum ratings have for system design?


Understanding maximum ratings such as continuous drain current and voltage limits is crucial in system design to avoid exceeding those thresholds, ensuring performance and reliability in applications.

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