Infineon OptiMOS-T Type N-Channel MOSFET, 50 A, 120 V Enhancement, 3-Pin TO-252 IPD50N12S3L15ATMA1
- RS-artikelnummer:
- 214-9038
- Tillv. art.nr:
- IPD50N12S3L15ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
175,81 kr
(exkl. moms)
219,76 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 25 januari 2027
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 10 | 17,581 kr | 175,81 kr |
| 20 - 90 | 16,117 kr | 161,17 kr |
| 100 - 240 | 14,874 kr | 148,74 kr |
| 250 - 490 | 13,821 kr | 138,21 kr |
| 500 + | 13,406 kr | 134,06 kr |
*vägledande pris
- RS-artikelnummer:
- 214-9038
- Tillv. art.nr:
- IPD50N12S3L15ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS-T | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS-T | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.
It is Automotive AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
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