Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S223ATMA2

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199,58 kr

(exkl. moms)

249,48 kr

(inkl. moms)

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Enheter
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20 - 809,979 kr199,58 kr
100 - 1809,481 kr189,62 kr
200 - 4809,078 kr181,56 kr
500 - 9808,686 kr173,72 kr
1000 +8,087 kr161,74 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
214-9036
Tillv. art.nr:
IPD30N06S223ATMA2
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.5mm

Height

2.3mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.

It is Automotive AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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