Infineon OptiMOS 5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 214-9082
- Tillv. art.nr:
- IPP052N08N5AKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
967,70 kr
(exkl. moms)
1 209,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 1 200 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 19,354 kr | 967,70 kr |
| 100 - 200 | 15,676 kr | 783,80 kr |
| 250 - 450 | 14,708 kr | 735,40 kr |
| 500 - 950 | 13,935 kr | 696,75 kr |
| 1000 + | 13,355 kr | 667,75 kr |
*vägledande pris
- RS-artikelnummer:
- 214-9082
- Tillv. art.nr:
- IPP052N08N5AKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs. These latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies.
Qualified according to JEDEC1 for target applications
100% avalanche tested
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