Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 10 A, 600 V Enhancement, 5-Pin ThinPAK

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27 201,00 kr

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34 002,00 kr

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3000 +9,067 kr27 201,00 kr

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RS-artikelnummer:
214-4399
Tillv. art.nr:
IPL60R365P7AUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

ThinPAK

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

365mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

46W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

8.1mm

Height

1.1mm

Width

8.1 mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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