Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 10 A, 600 V Enhancement, 5-Pin ThinPAK

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27 201,00 kr

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34 002,00 kr

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RS-artikelnummer:
214-4399
Tillv. art.nr:
IPL60R365P7AUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

ThinPAK

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

365mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

46W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

8.1mm

Standards/Approvals

No

Height

1.1mm

Width

8.1 mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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