Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ110N08NS5ATMA1
- RS-artikelnummer:
- 214-4345
- Tillv. art.nr:
- BSZ110N08NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
197,96 kr
(exkl. moms)
247,44 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 13 700 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 9,898 kr | 197,96 kr |
| 100 - 180 | 9,408 kr | 188,16 kr |
| 200 - 480 | 9,005 kr | 180,10 kr |
| 500 - 980 | 8,613 kr | 172,26 kr |
| 1000 + | 8,019 kr | 160,38 kr |
*vägledande pris
- RS-artikelnummer:
- 214-4345
- Tillv. art.nr:
- BSZ110N08NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Height 1.1mm | ||
Length 3.4mm | ||
Automotive Standard No | ||
The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
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