Infineon OptiMOS 5 Type N-Channel MOSFET, 64 A, 80 V, 8-Pin PQFN ISZ0602NLSATMA1
- RS-artikelnummer:
- 232-6769
- Tillv. art.nr:
- ISZ0602NLSATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
85,83 kr
(exkl. moms)
107,29 kr
(inkl. moms)
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- Dessutom levereras 4 695 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 17,166 kr | 85,83 kr |
| 50 - 120 | 15,456 kr | 77,28 kr |
| 125 - 245 | 14,426 kr | 72,13 kr |
| 250 - 495 | 13,396 kr | 66,98 kr |
| 500 + | 12,342 kr | 61,71 kr |
*vägledande pris
- RS-artikelnummer:
- 232-6769
- Tillv. art.nr:
- ISZ0602NLSATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.9mΩ | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 3.4mm | |
| Length | 3.4mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.9mΩ | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 3.4mm | ||
Length 3.4mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 80 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
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