Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ070N08LS5ATMA1
- RS-artikelnummer:
- 214-4341
- Tillv. art.nr:
- BSZ070N08LS5ATMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 förpackning med 15 enheter)*
136,635 kr
(exkl. moms)
170,79 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 + | 9,109 kr | 136,64 kr |
*vägledande pris
- RS-artikelnummer:
- 214-4341
- Tillv. art.nr:
- BSZ070N08LS5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.4mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 14.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.4mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 14.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Automotive Standard No | ||
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package
Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Summary of Features
Benefits
Potential Applications
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