STMicroelectronics SCT1000N170 Type N-Channel MOSFET, 7 A, 1700 V Enhancement, 3-Pin Hip-247 SCT1000N170
- RS-artikelnummer:
- 212-2092
- Tillv. art.nr:
- SCT1000N170
- Tillverkare / varumärke:
- STMicroelectronics
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Enheter | Per enhet |
|---|---|
| 1 - 4 | 114,24 kr |
| 5 - 9 | 111,33 kr |
| 10 + | 108,64 kr |
*vägledande pris
- RS-artikelnummer:
- 212-2092
- Tillv. art.nr:
- SCT1000N170
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | Hip-247 | |
| Series | SCT1000N170 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.66Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Width | 20.15 mm | |
| Height | 5.15mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type Hip-247 | ||
Series SCT1000N170 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.66Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Width 20.15 mm | ||
Height 5.15mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability.
High speed switching performance
Very fast and robust intrinsic body diode
Low capacitances
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