STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

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3 979,80 kr

(exkl. moms)

4 974,60 kr

(inkl. moms)

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RS-artikelnummer:
204-3957
Tillv. art.nr:
SCTWA35N65G2V
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Series

SCTWA35N65G2V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.072Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

73nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

240W

Forward Voltage Vf

3.3V

Maximum Operating Temperature

200°C

Standards/Approvals

No

Length

15.9mm

Width

5.1 mm

Height

41.2mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of both on-resistance and switching losses is almost independent of junction temperature.

Low capacitance

Very fast and robust intrinsic body diode

Very tight variation of on-resistance vs. temperature

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