STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET, 45 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4
- RS-artikelnummer:
- 233-0473
- Tillv. art.nr:
- SCTWA35N65G2V-4
- Tillverkare / varumärke:
- STMicroelectronics
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|---|---|
| 1 - 4 | 147,39 kr |
| 5 - 9 | 143,58 kr |
| 10 - 24 | 139,66 kr |
| 25 - 49 | 136,19 kr |
| 50 + | 132,83 kr |
*vägledande pris
- RS-artikelnummer:
- 233-0473
- Tillv. art.nr:
- SCTWA35N65G2V-4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTWA35N65G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Forward Voltage Vf | 3.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Length | 20.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTWA35N65G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Forward Voltage Vf 3.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Length 20.1mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency
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