onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L020N120SC1
- RS-artikelnummer:
- 202-5697
- Tillv. art.nr:
- NTH4L020N120SC1
- Tillverkare / varumärke:
- onsemi
Antal (1 enhet)*
229,10 kr
(exkl. moms)
286,38 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 174 enhet(er), redo att levereras
Enheter | Per enhet |
|---|---|
| 1 + | 229,10 kr |
*vägledande pris
- RS-artikelnummer:
- 202-5697
- Tillv. art.nr:
- NTH4L020N120SC1
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.7V | |
| Maximum Power Dissipation Pd | 510W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.2mm | |
| Width | 5.2 mm | |
| Standards/Approvals | No | |
| Length | 18.62mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.7V | ||
Maximum Power Dissipation Pd 510W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Height 15.2mm | ||
Width 5.2 mm | ||
Standards/Approvals No | ||
Length 18.62mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
20mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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