STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK

Se alla MOSFETs

Antal (1 rulle med 1000 enheter)*

273 943,00 kr

(exkl. moms)

342 429,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 31 augusti 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
1000 +273,943 kr273 943,00 kr

*vägledande pris

RS-artikelnummer:
201-0868
Tillv. art.nr:
SCTH90N65G2V-7
Tillverkare / varumärke:
STMicroelectronics
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK

Series

SCTH90

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

484W

Typical Gate Charge Qg @ Vgs

157nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

10.4mm

Standards/Approvals

No

Width

4.8 mm

Length

15.25mm

Automotive Standard

No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 175 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

relaterade länkar