Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-251
- RS-artikelnummer:
- 200-6869
- Tillv. art.nr:
- SIHU6N80AE-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
321,55 kr
(exkl. moms)
401,95 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 11 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 25 | 12,862 kr | 321,55 kr |
| 50 - 100 | 9,78 kr | 244,50 kr |
| 125 - 225 | 9,005 kr | 225,13 kr |
| 250 - 600 | 7,07 kr | 176,75 kr |
| 625 + | 6,783 kr | 169,58 kr |
*vägledande pris
- RS-artikelnummer:
- 200-6869
- Tillv. art.nr:
- SIHU6N80AE-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 22.5nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 22.5nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay SIHU6N80AE-GE3 is a E series power MOSFET.
Low figure-of-merit
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
relaterade länkar
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-251 SIHU6N80AE-GE3
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- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252