onsemi FCMT Type N-Channel MOSFET, 12 A, 650 V Enhancement, 4-Pin Power88 FCMT250N65S3

RS-artikelnummer:: 178-4657
Tillv. art.nr:: FCMT250N65S3
Tillverkare / varumärke:: onsemi

onsemi FCMT Type N-Channel MOSFET, 12 A, 650 V Enhancement, 4-Pin Power88 FCMT250N65S3

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

211,01 kr

(exkl. moms)

263,76 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 4 230 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
10 - 90	21,101 kr	211,01 kr
100 - 240	19,611 kr	196,11 kr
250 +	19,13 kr	191,30 kr

*vägledande pris

RS-artikelnummer:: 178-4657
Tillv. art.nr:: FCMT250N65S3
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	650V
	Series	FCMT
	Package Type	Power88
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	90W
	Maximum Gate Source Voltage Vgs	±30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	24nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	8 mm
	Length	8mm
	Height	1.05mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 650V
	Series FCMT
	Package Type Power88
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 90W
	Maximum Gate Source Voltage Vgs ±30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 24nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 8 mm
	Length 8mm
	Height 1.05mm
	Automotive Standard No

COO (Country of Origin):: PH

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

700 V @ TJ = 150 oC

Leadless Ultra-thin SMD package

Kelvin contact

Ultra Low Gate Charge (Typ. Qg = 24 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)

Optimized Capacitance

Typ. RDS(on) = 210 mΩ

Moisture Sensitivity Level 1 guarantee

Internal Gate Resistance: 0.5 Ω

Benefits:

Higher system reliability at low temperature operation

High power density

Low gate noise and switching loss

Low switching loss

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Telecommunication

Industrial

End Products:

Telecom / Server

Adapter

LED Lighting

onsemi FCMT Type N-Channel MOSFET, 12 A, 650 V Enhancement, 4-Pin Power88 FCMT250N65S3

GRATIS leverans för online beställningar över 500,00 kr

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