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STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220 STP26N60DM6

RS-artikelnummer:: 192-4925
Tillv. art.nr:: STP26N60DM6
Tillverkare / varumärke:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220 STP26N60DM6

Mängdrabatt möjlig

Antal (1 förpackning med 2 enheter)*

91,39 kr

(exkl. moms)

114,238 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Dessutom levereras 66 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
2 - 8	45,695 kr	91,39 kr
10 - 18	43,01 kr	86,02 kr
20 - 48	40,71 kr	81,42 kr
50 - 98	38,415 kr	76,83 kr
100 +	36,625 kr	73,25 kr

*vägledande pris

RS-artikelnummer:: 192-4925
Tillv. art.nr:: STP26N60DM6
Tillverkare / varumärke:: STMicroelectronics

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	195mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.6V
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Power Dissipation Pd	110W
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	150°C
	Width	4.6 mm
	Length	10.4mm
	Height	15.75mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 195mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.6V
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Power Dissipation Pd 110W
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 150°C
	Width 4.6 mm
	Length 10.4mm
	Height 15.75mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220 STP26N60DM6

GRATIS leverans för online beställningar över 500,00 kr

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