STMicroelectronics Type N-Channel MOSFET, 25 A, 600 V Enhancement, 5-Pin PowerFLAT STL45N60DM6

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108,14 kr

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135,18 kr

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  • Dessutom levereras 64 enhet(er) från den 29 december 2025
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2 +54,07 kr108,14 kr

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Förpackningsalternativ:
RS-artikelnummer:
192-4899
Tillv. art.nr:
STL45N60DM6
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerFLAT

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

160W

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

44nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

0.9mm

Standards/Approvals

No

Width

8.1 mm

Length

8.1mm

Automotive Standard

No

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

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