STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT

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67 767,00 kr

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84 708,00 kr

(inkl. moms)

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RS-artikelnummer:
192-4658
Tillv. art.nr:
STL26N60DM6
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerFLAT

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

215mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

110W

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.9mm

Length

8.1mm

Width

8.1 mm

Automotive Standard

No

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

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