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STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT STL26N60DM6

RS-artikelnummer:: 192-4882
Tillv. art.nr:: STL26N60DM6
Tillverkare / varumärke:: STMicroelectronics

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT STL26N60DM6

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Antal (1 förpackning med 5 enheter)*

123,54 kr

(exkl. moms)

154,425 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Dessutom levereras 265 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
5 - 20	24,708 kr	123,54 kr
25 - 45	24,058 kr	120,29 kr
50 - 120	23,408 kr	117,04 kr
125 - 245	22,826 kr	114,13 kr
250 +	22,266 kr	111,33 kr

*vägledande pris

RS-artikelnummer:: 192-4882
Tillv. art.nr:: STL26N60DM6
Tillverkare / varumärke:: STMicroelectronics

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerFLAT
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	215mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	24nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.6V
	Maximum Power Dissipation Pd	110W
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	0.9mm
	Length	8.1mm
	Width	8.1 mm
	Automotive Standard	No

	Välj alla
	Brand STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerFLAT
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 215mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 24nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.6V
	Maximum Power Dissipation Pd 110W
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 0.9mm
	Length 8.1mm
	Width 8.1 mm
	Automotive Standard No

COO (Country of Origin):: CN

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

Extremely high dv/dt ruggedness

Zener-protected

STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT STL26N60DM6

GRATIS leverans för online beställningar över 500,00 kr

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