STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 5-Pin PowerFLAT STL26N60DM6
- RS-artikelnummer:
- 192-4882
- Tillv. art.nr:
- STL26N60DM6
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
123,54 kr
(exkl. moms)
154,425 kr
(inkl. moms)
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- Dessutom levereras 265 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 24,708 kr | 123,54 kr |
| 25 - 45 | 24,058 kr | 120,29 kr |
| 50 - 120 | 23,408 kr | 117,04 kr |
| 125 - 245 | 22,826 kr | 114,13 kr |
| 250 + | 22,266 kr | 111,33 kr |
*vägledande pris
- RS-artikelnummer:
- 192-4882
- Tillv. art.nr:
- STL26N60DM6
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 215mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 215mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
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