STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263 STB11NM80T4
- RS-artikelnummer:
- 188-8461
- Tillv. art.nr:
- STB11NM80T4
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
155,34 kr
(exkl. moms)
194,18 kr
(inkl. moms)
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- Leverans från den 24 april 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 8 | 77,67 kr | 155,34 kr |
| 10 - 18 | 73,81 kr | 147,62 kr |
| 20 - 48 | 66,415 kr | 132,83 kr |
| 50 - 98 | 59,81 kr | 119,62 kr |
| 100 + | 56,785 kr | 113,57 kr |
*vägledande pris
- RS-artikelnummer:
- 188-8461
- Tillv. art.nr:
- STB11NM80T4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MDmesh Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | STB11NM80 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.4Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.86V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -65°C | |
| Typical Gate Charge Qg @ Vgs | 43.6nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 4.37mm | |
| Length | 10.4mm | |
| Width | 9.35 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MDmesh Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series STB11NM80 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.4Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.86V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -65°C | ||
Typical Gate Charge Qg @ Vgs 43.6nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 4.37mm | ||
Length 10.4mm | ||
Width 9.35 mm | ||
Automotive Standard No | ||
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on)Qg in the industry
Applications
Switching applications
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