STMicroelectronics MDmesh Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 103-1986
- Tillv. art.nr:
- STW11NM80
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
854,79 kr
(exkl. moms)
1 068,48 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 390 enhet(er) från den 25 december 2025
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 60 | 28,493 kr | 854,79 kr |
| 90 - 480 | 22,766 kr | 682,98 kr |
| 510 - 960 | 20,257 kr | 607,71 kr |
| 990 - 4980 | 18,062 kr | 541,86 kr |
| 5010 + | 17,636 kr | 529,08 kr |
*vägledande pris
- RS-artikelnummer:
- 103-1986
- Tillv. art.nr:
- STW11NM80
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | MDmesh | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.86V | |
| Typical Gate Charge Qg @ Vgs | 43.6nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.15mm | |
| Width | 5.15 mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series MDmesh | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.86V | ||
Typical Gate Charge Qg @ Vgs 43.6nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 20.15mm | ||
Width 5.15 mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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