STMicroelectronics MDmesh Type N-Channel MOSFET, 17 A, 800 V Enhancement, 3-Pin TO-263
- RS-artikelnummer:
- 168-7535
- Tillv. art.nr:
- STB18NM80
- Tillverkare / varumärke:
- STMicroelectronics
Antal (1 rulle med 1000 enheter)*
25 688,00 kr
(exkl. moms)
32 110,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 24 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1000 + | 25,688 kr | 25 688,00 kr |
*vägledande pris
- RS-artikelnummer:
- 168-7535
- Tillv. art.nr:
- STB18NM80
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | MDmesh | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 295mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Width | 10.4 mm | |
| Length | 10.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series MDmesh | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 295mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Width 10.4 mm | ||
Length 10.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
relaterade länkar
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 STB18NM80
- STMicroelectronics MDmesh Type N-Channel MDmesh II Power MOSFET 500 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh Type N-Channel MDmesh II Power MOSFET 500 V Enhancement, 3-Pin TO-263 STB23NM50N
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 STB24NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP18NM80
- STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET 800 V Enhancement, 3-Pin TO-263