STMicroelectronics STB11NM80 Type N-Channel MDmesh Power MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-263

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36 557,00 kr

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45 696,00 kr

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RS-artikelnummer:
188-8280
Tillv. art.nr:
STB11NM80T4
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MDmesh Power MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

STB11NM80

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.4Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.86V

Minimum Operating Temperature

-65°C

Maximum Power Dissipation Pd

150W

Typical Gate Charge Qg @ Vgs

43.6nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Width

9.35 mm

Length

10.4mm

Standards/Approvals

No

Height

4.37mm

Automotive Standard

No

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Low input capacitance and gate charge

Low gate input resistance

Best RDS(on)Qg in the industry

Applications

Switching applications

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