STMicroelectronics Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-252

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21 947,50 kr

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27 435,00 kr

(inkl. moms)

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RS-artikelnummer:
188-8289
Tillv. art.nr:
STD5N80K5
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.73Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

5nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

60W

Maximum Operating Temperature

150°C

Length

6.6mm

Standards/Approvals

No

Height

2.17mm

Width

6.2 mm

Automotive Standard

No

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Industry’s lowest RDS(on) x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

Zener-protected

Applications

Switching applications

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