STMicroelectronics SuperMESH Type N-Channel MOSFET, 1 A, 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4

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181,66 kr

(exkl. moms)

227,08 kr

(inkl. moms)

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20 - 1809,083 kr181,66 kr
200 - 4808,635 kr172,70 kr
500 - 9808,008 kr160,16 kr
1000 - 19807,347 kr146,94 kr
2000 +7,079 kr141,58 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
151-905
Tillv. art.nr:
STD1NK80ZT4
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

800V

Series

SuperMESH

Package Type

TO-252

Pin Count

3

Maximum Drain Source Resistance Rds

16Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

7.7nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

45W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

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