Vishay SQM40041EL Type N-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 SQM40041EL_GE3
- RS-artikelnummer:
- 188-5006
- Tillv. art.nr:
- SQM40041EL_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
181,33 kr
(exkl. moms)
226,66 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 605 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 36,266 kr | 181,33 kr |
| 50 - 120 | 30,868 kr | 154,34 kr |
| 125 - 245 | 29,008 kr | 145,04 kr |
| 250 - 495 | 27,238 kr | 136,19 kr |
| 500 + | 25,402 kr | 127,01 kr |
*vägledande pris
- RS-artikelnummer:
- 188-5006
- Tillv. art.nr:
- SQM40041EL_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | SQM40041EL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0034Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 288nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 157W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 10.41mm | |
| Width | 9.65 mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series SQM40041EL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0034Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 288nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 157W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 10.41mm | ||
Width 9.65 mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
Automotive P-Channel 40 V (D-S) 175 °C MOSFET.
TrenchFET® power MOSFET
Package with low thermal resistance
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