Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363 SI1411DH-T1-GE3

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92,74 kr

(exkl. moms)

115,92 kr

(inkl. moms)

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200 - 4804,407 kr88,14 kr
500 - 9803,943 kr78,86 kr
1000 - 19802,828 kr56,56 kr
2000 +2,296 kr45,92 kr

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Förpackningsalternativ:
RS-artikelnummer:
180-7915
Tillv. art.nr:
SI1411DH-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.52A

Maximum Drain Source Voltage Vds

150V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

2.6Ω

Channel Mode

Enhancement

Forward Voltage Vf

-1.1V

Typical Gate Charge Qg @ Vgs

4.2nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1W

Maximum Operating Temperature

150°C

Width

2.4 mm

Height

1.1mm

Length

2.2mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay Siliconix SI1411DH series TrenchFET P channel power MOSFET has drain to source voltage of 150 V. It is used in active clamp circuits in DC/DC power supplies.

Small, thermally enhanced SC-70 package

Ultra low on-resistance

Pb-free

Halogen free

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