Vishay Type P-Channel Power MOSFET, 110 A, 80 V, 3-Pin TO-263

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Antal (1 rulle med 800 enheter)*

20 106,40 kr

(exkl. moms)

25 132,80 kr

(inkl. moms)

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  • Dessutom levereras 800 enhet(er) från den 29 december 2025
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800 +25,133 kr20 106,40 kr

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RS-artikelnummer:
180-7418
Tillv. art.nr:
SUM110P08-11L-E3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.0112Ω

Typical Gate Charge Qg @ Vgs

85nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

10.414 mm

Standards/Approvals

RoHS

Length

15.875mm

Automotive Standard

No

COO (Country of Origin):
TW

Vishay MOSFET


The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 80V and maximum gate-source voltage of 20V. It has a drain-source resistance of 11.2mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications


• Adaptor switches

• DC/DC primary switches

• Load switches

• Power management

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