Vishay SUM110P06-08L Type P-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263 SUM110P06-08L-E3
- RS-artikelnummer:
- 710-5014
- Tillv. art.nr:
- SUM110P06-08L-E3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
198,69 kr
(exkl. moms)
248,36 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 08 februari 2027
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 39,738 kr | 198,69 kr |
| 25 - 45 | 33,756 kr | 168,78 kr |
| 50 - 120 | 31,74 kr | 158,70 kr |
| 125 - 245 | 29,814 kr | 149,07 kr |
| 250 + | 23,834 kr | 119,17 kr |
*vägledande pris
- RS-artikelnummer:
- 710-5014
- Tillv. art.nr:
- SUM110P06-08L-E3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | SUM110P06-08L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.75W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series SUM110P06-08L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.75W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.5V | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
relaterade länkar
- Vishay SUM110P06-08L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SUM110P06-07L-E3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay SUM55P06-19L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SUM55P06-19L-E3
- Vishay SUM55P06-19L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay Type P-Channel Power MOSFET 80 V, 3-Pin TO-263 SUM110P08-11L-E3
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 NTBS2D7N06M7