Vishay TrenchFET Type P-Channel MOSFET, 3.1 A, 20 V Enhancement, 3-Pin SOT-23

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4 236,00 kr

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5 295,00 kr

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RS-artikelnummer:
180-7269
Tillv. art.nr:
SI2301CDS-T1-E3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

112mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

1W

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Operating Temperature

150°C

Length

3.04mm

Standards/Approvals

No

Height

1.12mm

Width

2.64 mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 8V. It has drain-source resistance of 112mohm at a gate-source voltage of 4.5V. It has continuous drain current of 3.1A and maximum power dissipation of 1.6W. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

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