onsemi Isolated 2 Type P, Type N-Channel MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23
- RS-artikelnummer:
- 166-2481
- Tillv. art.nr:
- FDC6321C
- Tillverkare / varumärke:
- onsemi
Antal (1 rulle med 3000 enheter)*
6 480,00 kr
(exkl. moms)
8 100,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 3 000 enhet(er) från den 20 januari 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 2,16 kr | 6 480,00 kr |
*vägledande pris
- RS-artikelnummer:
- 166-2481
- Tillv. art.nr:
- FDC6321C
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Forward Voltage Vf | 0.89V | |
| Maximum Gate Source Voltage Vgs | -8/8 V | |
| Maximum Power Dissipation Pd | 900mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1mm | |
| Width | 1.7 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Forward Voltage Vf 0.89V | ||
Maximum Gate Source Voltage Vgs -8/8 V | ||
Maximum Power Dissipation Pd 900mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1mm | ||
Width 1.7 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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