onsemi Isolated 2 Type N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23
- RS-artikelnummer:
- 178-7598
- Tillv. art.nr:
- NDC7002N
- Tillverkare / varumärke:
- onsemi
Antal (1 rulle med 3000 enheter)*
3 753,00 kr
(exkl. moms)
4 692,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 6 000 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 1,251 kr | 3 753,00 kr |
*vägledande pris
- RS-artikelnummer:
- 178-7598
- Tillv. art.nr:
- NDC7002N
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 510mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 960mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 510mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 960mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1mm | ||
Length 3mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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