Vishay Siliconix TrenchFET Type P-Channel MOSFET, 16 A, 80 V Enhancement, 8-Pin SO-8 SQJ481EP-T1_GE3
- RS-artikelnummer:
- 178-3883
- Tillv. art.nr:
- SQJ481EP-T1_GE3
- Tillverkare / varumärke:
- Vishay Siliconix
Antal (1 förpackning med 25 enheter)*
177,775 kr
(exkl. moms)
222,225 kr
(inkl. moms)
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- Dessutom levereras 9 000 enhet(er) från den 25 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 + | 7,111 kr | 177,78 kr |
*vägledande pris
- RS-artikelnummer:
- 178-3883
- Tillv. art.nr:
- SQJ481EP-T1_GE3
- Tillverkare / varumärke:
- Vishay Siliconix
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 45W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 45W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5 mm | ||
Height 1.07mm | ||
Length 5.99mm | ||
Automotive Standard AEC-Q101 | ||
RoHS-status: Undantagen
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of20V. It has drain-source resistance of 80mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 45W and continuous drain current of 16A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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