Name: ROHM RQ1C065UN N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSMT RQ1C065UNTR
Brand: ROHM
SKU: 172-0527
Price: 5.29 SEK
Availability: Discontinued

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Välj alla	Attribut	Värde
	Brand	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	6.5 A
	Maximum Drain Source Voltage	20 V
	Package Type	TSMT
	Series	RQ1C065UN
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	58 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	0.3V
	Maximum Power Dissipation	1.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±10 V
	Width	2.5mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	11 nC @ 4.5 V
	Maximum Operating Temperature	+150 °C
	Length	3.1mm
	Height	0.8mm
	Forward Diode Voltage	1.2V

	Välj alla
	Brand ROHM
	Channel Type N
	Maximum Continuous Drain Current 6.5 A
	Maximum Drain Source Voltage 20 V
	Package Type TSMT
	Series RQ1C065UN
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 58 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 0.3V
	Maximum Power Dissipation 1.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±10 V
	Width 2.5mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 11 nC @ 4.5 V
	Maximum Operating Temperature +150 °C
	Length 3.1mm
	Height 0.8mm
	Forward Diode Voltage 1.2V

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Low voltage(1.5V) drive type
Nch Small-signal MOSFET
Small Surface Mount Package
Pb Free

ROHM RQ1C065UN N-Channel MOSFET, 6.5 A, 20 V, 8-Pin TSMT RQ1C065UNTR

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