IXYS Type N-Channel MOSFET, 46 A, 650 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 168-4811
- Tillv. art.nr:
- IXFH46N65X2
- Tillverkare / varumärke:
- IXYS
Antal (1 rör med 30 enheter)*
2 559,54 kr
(exkl. moms)
3 199,44 kr
(inkl. moms)
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- 90 enhet(er) levereras från den 29 december 2025
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 + | 85,318 kr | 2 559,54 kr |
*vägledande pris
- RS-artikelnummer:
- 168-4811
- Tillv. art.nr:
- IXFH46N65X2
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 69mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 660W | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 21.34 mm | |
| Height | 5.21mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 69mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 660W | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 21.34 mm | ||
Height 5.21mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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