Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220 IRFB3307ZPBF

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RS-artikelnummer:
165-7607
Tillv. art.nr:
IRFB3307ZPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

230W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.66mm

Height

9.02mm

Width

4.82 mm

Standards/Approvals

No

Automotive Standard

No

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