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Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220 IRFB3307ZPBF

RS-artikelnummer:: 165-7607
Tillv. art.nr:: IRFB3307ZPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220 IRFB3307ZPBF

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Antal (1 rör med 50 enheter)*

1 034,10 kr

(exkl. moms)

1 292,60 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 20 april 2026

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Enheter	Per enhet	Per Rør*
50 - 50	20,682 kr	1 034,10 kr
100 - 200	17,373 kr	868,65 kr
250 - 450	16,132 kr	806,60 kr
500 - 950	15,098 kr	754,90 kr
1000 +	13,857 kr	692,85 kr

*vägledande pris

RS-artikelnummer:: 165-7607
Tillv. art.nr:: IRFB3307ZPBF
Tillverkare / varumärke:: Infineon

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	6mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	79nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	230W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	9.02mm
	Standards/Approvals	No
	Width	4.82 mm
	Length	10.66mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 6mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 79nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 230W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 9.02mm
	Standards/Approvals No
	Width 4.82 mm
	Length 10.66mm
	Automotive Standard No

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