Vishay Si2304DDS Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23
- RS-artikelnummer:
- 165-6932
- Tillv. art.nr:
- SI2304DDS-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
3 405,00 kr
(exkl. moms)
4 257,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 3 000 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 3000 | 1,135 kr | 3 405,00 kr |
| 6000 + | 1,078 kr | 3 234,00 kr |
*vägledande pris
- RS-artikelnummer:
- 165-6932
- Tillv. art.nr:
- SI2304DDS-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | Si2304DDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series Si2304DDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
relaterade länkar
- Vishay Si2304DDS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 Si2319DDS-T1-GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay Si2338DS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2374DS Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Si2366DS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
