Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC

RS-artikelnummer:: 165-5940
Tillv. art.nr:: IRF7380TRPBF
Tillverkare / varumärke:: Infineon

Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3.6 A, 80 V Enhancement, 8-Pin SOIC

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18 960,00 kr

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RS-artikelnummer:: 165-5940
Tillv. art.nr:: IRF7380TRPBF
Tillverkare / varumärke:: Infineon

Specifikationer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	80V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	73mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	15nC
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	1.3V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Standards/Approvals	No
	Width	4 mm
	Length	5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 80V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 73mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 15nC
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 1.3V
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Standards/Approvals No
	Width 4 mm
	Length 5mm
	Number of Elements per Chip 2
	Automotive Standard No

Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7380TRPBF

This MOSFET is designed for efficient power management in various electronic applications. With a high voltage rating and a continuous drain current of 3.6A, it is suitable for high frequency DC-DC converters, ensuring reliable performance. Its Advanced design offers a practical solution for professionals in automation, electronics, and mechanical sectors seeking a versatile component for their circuits.

Features & Benefits

• Industry-standard SO-8 package ensures compatibility across different vendors

• Low Rds(on) of 73mΩ optimises efficiency in power applications

• Enhancement mode operation enhances performance characteristics

• Low gate charge of 15nC facilitates quicker switching speeds

• Maximum drain-source voltage of 80V accommodates high power needs

• RoHS compliant and halogen-free promotes environmental safety

Applications

• Used in high frequency DC-DC converters for power regulation

• Effective in battery management systems that require low power loss

• Suitable for motor controllers needing efficient switching performance

• Employed in power supply units to improve overall efficiency

• Appropriate for driving inductive loads like relays and solenoids

What are the implications of the maximum continuous drain current?

The maximum continuous drain current of 3.6A indicates its capability to manage higher currents in applications such as power supply circuits, ensuring stable operation without overheating.

How does the low Rds(on) affect performance?

The low Rds(on) of 73mΩ reduces power losses during operation, enhancing overall system efficiency, particularly beneficial in high frequency switching applications.

What is the significance of its temperature ratings?

Operating between -55°C and +150°C ensures the component can withstand harsh environmental conditions, making it suitable for industrial applications.

Can this component be directly mounted on PCBs?

Yes, its surface mount design allows for easy integration into PCB layouts, promoting efficient manufacturing processes and ensuring space-saving benefits in Compact designs.

How does the gate threshold voltage influence its operation?

With a gate threshold voltage ranging from 2V to 4V, it provides design flexibility, allowing compatibility with various control signals while ensuring effective device activation.