Infineon 2 Typ N Kanal Isolerad, MOSFET, 4.9 A 30 V Förbättring, 8 Ben, SOIC, HEXFET

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RS-artikelnummer:
165-5931
Tillv. art.nr:
IRF7303TRPBF
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Produkttyp

MOSFET

Kanaltyp

Typ N

Maximal kontinuerlig dräneringsström Id

4.9A

Maximal källspänning för dränering Vds

30V

Serie

HEXFET

Kapseltyp

SOIC

Typ av fäste

Yta

Antal ben

8

Maximal drain-källresistans Rds

80mΩ

Kanalläge

Förbättring

Maximal effektförlust Pd

2W

Framåtriktad spänning Vf

1V

Typisk grindladdning Qg @ Vgs

16.7nC

Minsta arbetsstemperatur

-55°C

Transistorkonfiguration

Isolerad

Maximal arbetstemperatur

150°C

Längd

5mm

Höjd

1.5mm

Standarder/godkännanden

No

Antal element per chip

2

Fordonsstandard

Nej

Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF


This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.

Features & Benefits


• Enhanced efficiency with a low Rds(on) of 80 mΩ

• High power dissipation capability with a maximum of 2W

• Dual-channel integration for increased functionality in designs

• Robust thermal operation up to +150°C for versatile applications

• Optimised for enhancement mode operation to improve energy management

• Compact SOIC package facilitates easy integration into modern PCBs

Applications


• Used in power supply circuits for voltage regulation

• Employed in motor control systems for efficient operation

• Suitable for lighting requiring robust switching

• Integrated into consumer electronics for improved power efficiency

• Ideal for automotive systems that require dependable performance

What is the maximum gate-source voltage for this device?


The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.

How does the Rds(on) value affect efficiency?


A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.

Can it operate at extreme temperatures?


Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.

What type of circuit boards is this compatible with?


It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.

How should one approach the installation of this component?


Care should be taken to use appropriate soldering techniques to avoid heat damage and ensure a secure fit on the PCB.

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