Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC

Se alla MOSFETs

Antal (1 rulle med 4000 enheter)*

14 724,00 kr

(exkl. moms)

18 404,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 11 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
4000 +3,681 kr14 724,00 kr

*vägledande pris

RS-artikelnummer:
165-5931
Tillv. art.nr:
IRF7303TRPBF
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.9A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.7nC

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

5mm

Height

1.5mm

Width

4 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF


This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for Compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.

Features & Benefits


• Enhanced efficiency with a low Rds(on) of 80 mΩ

• High power dissipation capability with a maximum of 2W

• Dual-channel integration for increased functionality in designs

• Robust thermal operation up to +150°C for versatile applications

• Optimised for enhancement mode operation to improve energy management

• Compact SOIC package facilitates easy integration into modern PCBs

Applications


• Used in power supply circuits for voltage regulation

• Employed in motor control systems for efficient operation

• Suitable for lighting requiring robust switching

• Integrated into consumer electronics for improved power efficiency

• Ideal for automotive systems that require dependable performance

What is the maximum gate-source voltage for this device?


The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.

How does the Rds(on) Value affect efficiency?


A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.

Can it operate at extreme temperatures?


Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.

What type of circuit boards is this compatible with?


It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.

How should one approach the installation of this component?


Care should be taken to use appropriate soldering techniques to avoid heat damage and ensure a secure fit on the PCB.

relaterade länkar