Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263

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RS-artikelnummer:
165-5484
Tillv. art.nr:
IRFS7437TRLPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

250A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

230W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Height

4.83mm

Width

9.65 mm

Length

10.67mm

Standards/Approvals

No

Automotive Standard

No

RoHS-status: Inte relevant

COO (Country of Origin):
MX

Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF


This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its Ability to manage high current and voltage levels makes it well-suited for Advanced technology applications.

Features & Benefits


• Supports a maximum continuous drain current of 250A for high-power applications

• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups

• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses

• Designed for surface mounting, simplifying installation

• Capable of handling Rapid switching applications, which enhances efficiency

Applications


• Suitable for brushed motor drive

• Ideal for battery-powered circuits, enabling efficient power usage

• Employed in half-bridge and full-bridge topologies for precise control

• Utilised in synchronous rectifier to enhance energy savings

• Applicable in resonant mode power supplies for stable performance

How is the power dissipation managed during operation?


Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions.

What is the significance of the low Rds(on) value?


The low Rds(on) Value minimises energy loss during operation, improving efficiency in high-current applications.

Can this be used in high-temperature environments?


With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments.

What installation considerations should I be aware of?


Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications.

Is it compatible with various power supply designs?


Yes, the MOSFET is versatile and can be integrated into numerous power supply designs, providing adaptability across different projects.

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