Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263 IRFS4229TRLPBF
- RS-artikelnummer:
- 217-2634
- Tillv. art.nr:
- IRFS4229TRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
173,87 kr
(exkl. moms)
217,34 kr
(inkl. moms)
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- Dessutom levereras 2 610 enhet(er) från den 26 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 34,774 kr | 173,87 kr |
| 25 - 45 | 30,608 kr | 153,04 kr |
| 50 - 120 | 28,868 kr | 144,34 kr |
| 125 - 245 | 26,79 kr | 133,95 kr |
| 250 + | 24,694 kr | 123,47 kr |
*vägledande pris
- RS-artikelnummer:
- 217-2634
- Tillv. art.nr:
- IRFS4229TRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
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Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 48mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.65mm | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Standards/Approvals | EIA 418 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 48mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 9.65mm | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Standards/Approvals EIA 418 | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET is specifically designed for Sustain ; Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
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