Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263 AUIRFS8407TRL
- RS-artikelnummer:
- 214-8961
- Tillv. art.nr:
- AUIRFS8407TRL
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
267,06 kr
(exkl. moms)
333,825 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 170 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 53,412 kr | 267,06 kr |
| 25 - 45 | 50,758 kr | 253,79 kr |
| 50 - 120 | 45,696 kr | 228,48 kr |
| 125 + | 45,404 kr | 227,02 kr |
*vägledande pris
- RS-artikelnummer:
- 214-8961
- Tillv. art.nr:
- AUIRFS8407TRL
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
Automotive Qualified
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