Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263

RS-artikelnummer:: 217-2633
Tillv. art.nr:: IRFS4229TRLPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263

Antal (1 rulle med 800 enheter)*

13 732,80 kr

(exkl. moms)

17 166,40 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Enheter	Per enhet	Per rulle*
800 +	17,166 kr	13 732,80 kr

*vägledande pris

RS-artikelnummer:: 217-2633
Tillv. art.nr:: IRFS4229TRLPBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	250V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	48mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	330W
	Typical Gate Charge Qg @ Vgs	110nC
	Maximum Operating Temperature	175°C
	Width	4.83 mm
	Length	10.67mm
	Height	9.65mm
	Standards/Approvals	EIA 418
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 250V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Maximum Drain Source Resistance Rds 48mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 330W
	Typical Gate Charge Qg @ Vgs 110nC
	Maximum Operating Temperature 175°C
	Width 4.83 mm
	Length 10.67mm
	Height 9.65mm
	Standards/Approvals EIA 418
	Automotive Standard No

Datasheet - IRFS4229TRLPBF

The Infineon HEXFET® Power MOSFET is specifically designed for Sustain ; Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.

Advanced Process Technology

Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Low QG for Fast Response

High Repetitive Peak Current Capability for Reliable Operation

Short Fall & Rise Times for Fast Switching

175°C Operating Junction Temperature for Improved Ruggedness

Repetitive Avalanche Capability for Robustness and Reliability

Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263

GRATIS leverans för online beställningar över 500,00 kr

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