Infineon Typ N Kanal, MOSFET, 45 A 100 V Förbättring, 3 Ben, TO-220, OptiMOS 3

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RS-artikelnummer:
145-8705
Tillv. art.nr:
IPA086N10N3GXKSA1
Tillverkare / varumärke:
Infineon
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Infineon

Kanaltyp

Typ N

Produkttyp

MOSFET

Maximal kontinuerlig dräneringsström Id

45A

Maximal källspänning för dränering Vds

100V

Kapseltyp

TO-220

Serie

OptiMOS 3

Fästetyp

Genomgående hål

Antal ben

3

Maximal drain-källresistans Rds

15.4mΩ

Kanalläge

Förbättring

Maximal spänning för grindkälla Vgs

20 V

Maximal effektförlust Pd

37.5W

Minsta arbetsstemperatur

-55°C

Typisk grindladdning Qg @ Vgs

42nC

Framåtriktad spänning Vf

1.2V

Maximal arbetstemperatur

175°C

Höjd

16.15mm

Bredd

4.85 mm

Längd

10.65mm

Standarder/godkännanden

No

Fordonsstandard

Nej

COO (ursprungsland):
CN

Infineon OptiMOS™ 3 Series MOSFET, 45A Maximum Continuous Drain Current, 37.5W Maximum Power Dissipation - IPA086N10N3GXKSA1


This MOSFET is engineered for high-performance applications in automation, electronics, and electrical engineering. As a power transistor, it enhances power management by providing excellent efficiency and reliability. Its durable design supports high-frequency switching, making it suitable for environments where strong performance is essential.

Features & Benefits


• N-channel configuration optimises current management

• Low on-resistance enhances overall system efficiency

• Operates at temperatures up to +175°C for adaptable applications

• Fully isolated package improves safety during operation

• Compliant with RoHS and halogen-free standards for eco-friendly use

Applications


• Ideal for high-frequency switching in electronic devices

• Employed in synchronous rectification to maximise efficiency

• Suitable for requiring high current handling

• Effective in temperature-sensitive environments due to robust thermal performance

What is the significance of the low on-resistance feature in this device?


The low on-resistance feature reduces power losses during operation, leading to improved efficiency in power management circuits. This results in less heat generation and enhanced overall performance.

Can this MOSFET be used in automotive applications?


Yes, it is appropriate for automotive applications as it meets high-temperature performance requirements and provides dependable operation under varying load conditions.

How does the gate threshold voltage influence circuit function?


The gate threshold voltage determines when the MOSFET begins conducting. In this case, it ranges from 2V to 3.5V, ensuring activation occurs only under suitable voltage levels, thereby protecting other components.

What types of circuits are most compatible with this power transistor?


This power transistor is compatible with high-frequency switching circuits and synchronous rectification applications, offering versatility for various electronic designs.

How should the MOSFET be mounted for optimal performance?


The MOSFET should be mounted using the through-hole method to ensure secure connections and effective heat dissipation based on its thermal resistance specifications.

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